Nonequilibrium Carrier Dynamics in Semiconductors : (Registro nro. 296843)
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| 001 - NÚMERO DE CONTROL | |
| campo de control | 296843 |
| 003 - IDENTIFICADOR DEL NÚMERO DE CONTROL | |
| campo de control | MX-SnUAN |
| 005 - FECHA Y HORA DE LA ÚLTIMA TRANSACCIÓN | |
| campo de control | 20160429155349.0 |
| 007 - CAMPO FIJO DE DESCRIPCIÓN FÍSICA--INFORMACIÓN GENERAL | |
| campo de control de longitud fija | cr nn 008mamaa |
| 008 - DATOS DE LONGITUD FIJA--INFORMACIÓN GENERAL | |
| campo de control de longitud fija | 150903s2006 gw | o |||| 0|eng d |
| 020 ## - NÚMERO INTERNACIONAL ESTÁNDAR DEL LIBRO | |
| Número Internacional Estándar del Libro | 9783540365884 |
| -- | 9783540365884 |
| 024 7# - IDENTIFICADOR DE OTROS ESTÁNDARES | |
| Número estándar o código | 10.1007/9783540365884 |
| Fuente del número o código | doi |
| 035 ## - NÚMERO DE CONTROL DEL SISTEMA | |
| Número de control de sistema | vtls000349195 |
| 039 #9 - NIVEL DE CONTROL BIBLIOGRÁFICO Y DETALLES DE CODIFICACIÓN [OBSOLETO] | |
| Nivel de reglas en descripción bibliográfica | 201509030451 |
| Nivel de esfuerzo utilizado para asignar no-encabezamientos de materia en puntos de acceso | VLOAD |
| Nivel de esfuerzo utilizado en la asignación de encabezamientos de materia | 201405050343 |
| Nivel de esfuerzo utilizado para asignar clasificación | VLOAD |
| -- | 201402071156 |
| -- | staff |
| 040 ## - FUENTE DE LA CATALOGACIÓN | |
| Centro catalogador/agencia de origen | MX-SnUAN |
| Lengua de catalogación | spa |
| Centro/agencia transcriptor | MX-SnUAN |
| Normas de descripción | rda |
| 050 #4 - CLASIFICACIÓN DE LA BIBLIOTECA DEL CONGRESO | |
| Número de clasificación | QC173.45-173.458 |
| 100 1# - ENTRADA PRINCIPAL--NOMBRE DE PERSONA | |
| Nombre de persona | Saraniti, M. |
| Término indicativo de función/relación | editor. |
| 9 (RLIN) | 332203 |
| 245 10 - MENCIÓN DE TÍTULO | |
| Título | Nonequilibrium Carrier Dynamics in Semiconductors : |
| Resto del título | Proceedings of the 14th International Conference, July 25–29, 2005, Chicago, USA / |
| Mención de responsabilidad, etc. | edited by M. Saraniti, U. Ravaioli. |
| 264 #1 - PRODUCCIÓN, PUBLICACIÓN, DISTRIBUCIÓN, FABRICACIÓN Y COPYRIGHT | |
| Producción, publicación, distribución, fabricación y copyright | Berlin, Heidelberg : |
| Nombre del de productor, editor, distribuidor, fabricante | Springer Berlin Heidelberg, |
| Fecha de producción, publicación, distribución, fabricación o copyright | 2006. |
| 300 ## - DESCRIPCIÓN FÍSICA | |
| Extensión | xiii, 372 páginas 223 ilustraciones |
| Otras características físicas | recurso en línea. |
| 336 ## - TIPO DE CONTENIDO | |
| Término de tipo de contenido | texto |
| Código de tipo de contenido | txt |
| Fuente | rdacontent |
| 337 ## - TIPO DE MEDIO | |
| Nombre/término del tipo de medio | computadora |
| Código del tipo de medio | c |
| Fuente | rdamedia |
| 338 ## - TIPO DE SOPORTE | |
| Nombre/término del tipo de soporte | recurso en línea |
| Código del tipo de soporte | cr |
| Fuente | rdacarrier |
| 347 ## - CARACTERÍSTICAS DEL ARCHIVO DIGITAL | |
| Tipo de archivo | archivo de texto |
| Formato de codificación | |
| Fuente | rda |
| 490 0# - MENCIÓN DE SERIE | |
| Mención de serie | Springer Proceedings in Physics, |
| Número Internacional Normalizado para Publicaciones Seriadas | 0930-8989 ; |
| Designación de volumen o secuencia | 110 |
| 500 ## - NOTA GENERAL | |
| Nota general | Springer eBooks |
| 505 0# - NOTA DE CONTENIDO CON FORMATO | |
| Nota de contenido con formato | Electron transport in curved low dimensional electron systems -- Fabrication and Characterization of InAs Mesoscopic Devices -- Nonlinear Effects on Quantum Interference in Electron Billiards -- Prediction of Entanglement Detection by I-V Characteristics -- Simulation of Entanglement Creation for Carrier-Impurity Scattering in a 2D System -- Super-Poissonian Current Fluctuations in Tunneling Through Coupled Quantum Dots -- Ultrafast Formation of Coupled Phonon-Plasmon Modes in InP Observed with Femtosecond Terahertz Spectroscopy -- Optical Coherent Control of Polariton Modes in ZnSe Single-Quantum Wells -- Optical Properties of Coupled Quantum Disk-Waveguide Structure -- Picosecond Spin-Preserving Carrier Capture in InGaAs/GaAs Quantum Dots -- Influence of Surfaces on the Pure Dephasing of Quantum Dots -- Exploiting the Non-Markovian Nature of Carrier-Phonon Dynamics: Multi-Pulse Control of Decoherence in Quantum Dots -- Numerical Study of Weak Localization Effects in Disordered Cavities -- Carrier Scattering by Optical Phonons, Two-Phonon Processes in Photon Absorption, and Spontaneous Polarization in Wurtzites -- Terahertz Plasma Oscillations in Nanotransistors -- High-Intensity THz Radiation From a Large Interdigitated Array Photoconductive Emitter -- Broadband Terahertz Emission From Ion-Implanted Semiconductors -- THz Collective Real-Space Oscillations of Ballistic Electrons in Wide Parabolic Potential Wells: an Exotic Transport Regime -- Effect of Injector Doping on Non-Equilibrium Electron Dynamics in Mid-Infrared GaAs/AlGaAs Quantum Cascade Lasers -- Experimental Investigation of Hot Carriers in THz and Mid-IR Quantum Cascade Lasers -- Time- and Spectrally Resolved THz Photoconductivity in Quantum Hall Devices -- Transport Properties and Terahertz Emission in Narrow Minigap GaAs-GaAlAs Superlattices -- Investigation of Antenna-Coupled MOM Diodes for Infrared Sensor Applications -- Transport and Noise in Ultrafast Unipolar Nanodiodes and Nanotransistors -- Monte Carlo Study of Coupled SO Scattering in Si MOSFETs with High ?- Dielectric Gate Stacks: Hot Electron and Disorder Effects -- Implementation of Separable Scattering Mechanisms in Three-Dimensional Quantum Mechanical Simulations of Devices -- A 2D-NEGF Quantum Transport Study of Unintentional Charges in a Double Gate Nanotransistor -- Wigner Function RTD Simulations with DMS Barriers -- High Field Transport in GaN and AlGaN/GaN Heterojunction Field Effect Transistors -- Impact Ionization and High-Field Electron Transport in GaN -- Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy -- Monte Carlo Investigation of Dynamic Transport in Nitrides -- High-Field Transport in Nitride Channels: a Hot-Phonon Bottleneck -- Quantum Transport and Spin Polarization in Strongly Biased Semiconductor Superlattices with Rashba Spin-Orbit Coupling -- Temperature Dependent Transport in Spin Valve Transistor Structures -- Spin Filtering Effects in a Quantum Point Contact -- Exchange Effects in the Wigner-Function Approach -- Few-Particle Quantum Transmitting Boundary Method: Scattering Resonances Through a Charged 1D Quantum Dot -- The R-? Approach to Tunnelling in Nanoscale Devices -- Monte Carlo Simulation of Solid-State Thermionic Energy Conversion Devices Based on Non-Planar Heterostructure Interfaces -- Simulations of Inelastic Tunnelling in Molecular Bridges -- Phonon Effects in Nanotubes: Phase Space Reduction and Electron Conductance -- Carbon Nanotubes Films for Sensing Applications: From Piezoresistive Sensor to Gas Sensing -- Electro-Thermal Transport in Silicon and Carbon Nanotube Devices -- Silicon-Based Ion Channel Platforms -- Implicit Water Simulations of Non-Equilibrium Charge Transport in Ion Channels -- An Investigation of the Dependence of Ionic Conduction on the Dielectric Properties of Porin -- Physical Mechanisms for Ion-Current Levelling Off in the KcsA Channel Through Combined Monte Carlo/Molecular Dynamics Simulations -- Simulations of the Gramicidin A Channel by Using the TR-PNP Model -- Phonon Emission and Absorption by Holes in the HOMO Bands of Duplex DNA -- An Impedance Network Model for the Electrical Properties of a Single-Protein Nanodevice -- Field Effect Transistor Constructed of Novel Structure With Short-Period (GaAs)n/(AlAs)m Superlattice -- Predominance of Geminate Process of Exciton Formation in AlGaAs Layers at Low Excitation -- Electron-Distribution Function for the Boltzmann Equation in Semiconductors -- Giant Increase of Electron Saturated Drift Velocity in a MODFET Channel -- Technological Crossroads: Silicon or III–V for Future Generation Nanotransistors -- Optical Phonon Modes and Electron-Phonon Interaction in a Spheroidal Quantum Dot -- Terahertz Negative Differential Conductivity in Heterostructures due to Population Inversion and Bunching of Ballistic Electrons -- Carrier Dynamics of Single ZnO Nanowires -- Traditional Hot-Electron MOS Devices for Novel Optoelectronic Applications -- Investigation of Self- Heating Effects in Individual SOI Devices and Device-Device Interactions -- Measurements of the Electrical Excitation of QH-Devices in the Real Time Domain -- Impact Ionization and Avalanche Multiplication in AlGaAs: a Time-Resolved Study -- Fermi-Dirac Statistics in Monte Carlo Simulations of InGaAs MOSFETs -- Monte Carlo Study of the Suppression of Diffusion Noise -- TeraHertz Emission From Nanometric HEMTs Analyzed by Noise Spectra -- Electron Transport in Novel Sb-based Quantum Cascade Lasers -- Quantum Phonon-Limited High-Field Electron Transport in Semiconductors -- Transit Time and Velocity Distribution Functions in Decananometer Gate-Length SOI MOSFETs -- Collision of Fano Resonances in a Molecular Ring -- Simulation of Domain Formation in p-Si/SiGe Quantum Cascade Structures -- Calculation of Optical Gain and Electron Relaxation Rates in Single- and Double-Phonon Resonant Quantum Cascade Lasers in a Magnetic Field -- Curvature-Dependent Conductance Resonances in Quantum Cavities -- Mid-Infrared Optical Absorption in Germanium Under Intense Laser Fields -- Interface Related Radiative Recombination on a Type-II Broken-Gap Single GalnAsSb/InAs Heterojunction -- Drift and Diffusion in Superlattices Within the Wannier-Stark Approach -- Ballistic Transport in Arbitrary Oriented Nanowire MOSFETs -- Scanning Tunneling Microscopy of Ultrathin Silicon-on-Insulator -- Effect of Regular and Irregular Potential Perturbations in Mesoscopic Cavities -- Simulation of Electronic/Ionic Mixed Conduction in Solid Ionic Memories -- Full-Band Modeling of Magnetic Semiconductors -- Cellular Monte Carlo Modeling of AlxIn1?xSb/InSb Quantum Well Transistors -- Non-Parabolic Model for the Solution of 2-D Quantum Transverse States Applied to Narrow Conduction Channel Simulation -- Self-Consistent Quantum Transport Theory of Carrier Capture in Heterostructures. |
| 520 ## - SUMARIO, ETC. | |
| Sumario, etc. | International experts gather every two years at this established conference to discuss recent developments in theory and experiment in non-equilibrium transport phenomena. These developments have been the driving force behind the spectacular advances in semiconductor physics and devices over the last few decades. Originally known as "Hot Carriers in Semiconductors," the 14th conference in the series covered a wide spectrum of traditional topics dealing with non-equilibrium phenomena, ranging from quantum transport to optical phenomena in mesoscopic and nano-scale structures. Particular attention was given this time to emerging areas of this rapidly evolving field, with many sessions covering terahertz devices, high field transport in nitride semiconductors, spintronics, molecular electronics, and bioelectronics applications. |
| 590 ## - NOTA LOCAL (RLIN) | |
| Nota local | Para consulta fuera de la UANL se requiere clave de acceso remoto. |
| 700 1# - PUNTO DE ACCESO ADICIONAL--NOMBRE DE PERSONA | |
| Nombre de persona | Ravaioli, U. |
| Término indicativo de función/relación | editor. |
| 9 (RLIN) | 332204 |
| 710 2# - PUNTO DE ACCESO ADICIONAL--NOMBRE DE ENTIDAD CORPORATIVA | |
| Nombre de entidad corporativa o nombre de jurisdicción como elemento de entrada | SpringerLink (Servicio en línea) |
| 9 (RLIN) | 299170 |
| 776 08 - ENTRADA/ENLACE A UN FORMATO FÍSICO ADICIONAL | |
| Información de relación/Frase instructiva de referencia | Edición impresa: |
| Número Internacional Estándar del Libro | 9783540365877 |
| 856 40 - LOCALIZACIÓN Y ACCESO ELECTRÓNICOS | |
| Identificador Uniforme del Recurso | <a href="http://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-3-540-36588-4">http://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-3-540-36588-4</a> |
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