GaN and ZnO-based Materials and Devices / edited by Stephen Pearton.
Tipo de material:
TextoSeries Springer Series in Materials Science ; 156Editor: Berlin, Heidelberg : Springer Berlin Heidelberg, 2012Descripción: xvii, 485 páginas 334 ilustraciones, 80 ilustraciones en color. recurso en líneaTipo de contenido: - texto
- computadora
- recurso en línea
- 9783642235214
- TA1750-1750.22
Springer eBooks
UV LEDs -- Non-Polar GaN Growth -- High-Quality AlGaN Alloys -- Bulk AlN for UV LEDs -- Enhancement of the Light-Extraction Efficiency of GaN-Based Light Emitting Diodes -- GaN-Based Sensors -- III-N Alloys for Solar Power Conversion -- GaN HEMT Technology -- GaN Power Devices -- Nitride Nanostructures -- Radiation-Induced Defects in GaN -- Electron Injection Effects in GaN -- Progress and Prospect of Rare-Earth Nitrides -- Advances in PLD of ZnO and Related Compounds -- ZnO Nanowires and p-Type Doping -- Multifunctional ZnO Structures -- ZnO/MgZnO Quantum Wells -- GZO TFTs.
The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.
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