Fundamentals of bias temperature instability in mos transistors : characterization methods, process and materials impact, dc and ac modeling / edited by Souvik Mahapatra.
Tipo de material:
TextoSeries Springer Series in Advanced Microelectronics ; 139Editor: New Delhi : Springer India : Springer, 2016Descripción: xvi, 269 páginas : 201 ilustraciones, 67 ilustraciones en colorTipo de contenido: - texto
- computadora
- recurso en línea
- 9788132225089
- TK7888.4
Contenidos:
Introduction: Bias Temperature Instability (BTI) in N and P Channel MOSFETs -- Characterization Methods for BTI Degradation and Associated Gate Insulator Defects -- Physical Mechanism of BTI Degradation – Direct Estimation of Trap Generation and Trapping -- Physical Mechanism of BTI Degradation –Modeling of Process and Material Dependence -- Reaction-Diffusion Model -- Modeling of DC and AC NBTI Degradation and Recovery for SiON and HKMG MOSFETs -- Index.
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Introduction: Bias Temperature Instability (BTI) in N and P Channel MOSFETs -- Characterization Methods for BTI Degradation and Associated Gate Insulator Defects -- Physical Mechanism of BTI Degradation – Direct Estimation of Trap Generation and Trapping -- Physical Mechanism of BTI Degradation –Modeling of Process and Material Dependence -- Reaction-Diffusion Model -- Modeling of DC and AC NBTI Degradation and Recovery for SiON and HKMG MOSFETs -- Index.
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