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008			150903s2006 xxu| o |||| 0|eng d
020			_a9780387281339 _9978-0-387-28133-9
024	7		_a10.1007/0387281339 _2doi
035			_avtls000330499
039		9	_a201509030722 _bVLOAD _c201404120454 _dVLOAD _c201404090236 _dVLOAD _c201401311343 _dstaff _y201401291456 _zstaff _wmsplit0.mrc _x919
050		4	_aTK7888.4
100	1		_aNarendra, Siva G. _eautor _9302629
245	1	0	_aLeakage in Nanometer CMOS Technologies / _cby Siva G. Narendra, Anantha Chandrakasan.
264		1	_aBoston, MA : _bSpringer US, _c2006.
300			_aX, 307 páginas, _brecurso en línea.
336			_atexto _btxt _2rdacontent
337			_acomputadora _bc _2rdamedia
338			_arecurso en línea _bcr _2rdacarrier
347			_aarchivo de texto _bPDF _2rda
490	0		_aSeries on Integrated Circuits and Systems, _x1558-9412
500			_aSpringer eBooks
505	0		_aTaxonomy of Leakage: Sources, Impact, and Solutions -- Leakage Dependence on Input Vector -- Power Gating and Dynamic Voltage Scaling -- Methodologies for Power Gating -- Body Biasing -- Process Variation and Adaptive Design -- Memory Leakage Reduction -- Active Leakage Reduction and Multi-Performance Devices -- Impact of Leakage Power and Variation on Testing -- Case Study: Leakage Reduction in Hitachi/Renesas Microprocessors -- Case Study: Leakage Reduction in the Intel Xscale Microprocessor -- Transistor Design to Reduce Leakage.
520			_aThe goal of Leakage in Nanometer CMOS Technologies is to provide ample detail so that the reader can understand why leakage power components are becoming increasingly relevant in CMOS systems that use nanometer scale MOS devices. Leakage current sources at the MOS device level including sub-threshold and different types of tunneling are discussed in detail. The book covers promising solutions at the device, circuit, and architecture levels of abstraction. Manifestation of these MOS device leakage components at the full chip level depends considerably on several aspects including the nature of the circuit block, its state, its application workload, and Process/Voltage/Temperature conditions. The sensitivity of the various MOS leakage sources to these conditions are described from the first principles. The resulting manifestations are discussed at length to help the reader understand the effectiveness of leakage power reduction solutions under these different conditions. Case studies are presented to highlight real world examples that reap the benefits of leakage power reduction solutions. Finally, the book highlights different device design choices that exist to mitigate increases in the leakage components as technology scales.
590			_aPara consulta fuera de la UANL se requiere clave de acceso remoto.
700	1		_aChandrakasan, Anantha. _eautor _9302630
710	2		_aSpringerLink (Servicio en línea) _9299170
776	0	8	_iEdición impresa: _z9780387257372
856	4	0	_uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/0-387-28133-9 _zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
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999			_c278777 _d278777