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008 | 150903s2008 xxu| o |||| 0|eng d | ||
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_a9780387745145 _99780387745145 |
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024 | 7 |
_a10.1007/9780387745145 _2doi |
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_aMX-SnUAN _bspa _cMX-SnUAN _erda |
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050 | 4 | _aTK7800-8360 | |
100 | 1 |
_aVashchenko, V. A. _eautor _9303698 |
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245 | 1 | 0 |
_aPhysical Limitations of Semiconductor Devices / _cby V. A. Vashchenko, V. F. Sinkevitch. |
264 | 1 |
_aBoston, MA : _bSpringer US, _c2008. |
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300 | _brecurso en línea. | ||
336 |
_atexto _btxt _2rdacontent |
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337 |
_acomputadora _bc _2rdamedia |
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_arecurso en línea _bcr _2rdacarrier |
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_aarchivo de texto _bPDF _2rda |
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500 | _aSpringer eBooks | ||
505 | 0 | _aFailures of Semiconductor Device -- Theoretical Basis of Current Instability in Transistor Structures -- Thermal Instability Mechanism -- Isothermal Current Instability in Silicon BJT and MOSFETs -- Isothermal Instability in Compound Semiconductor Devices -- Degradation Instabilities -- Conductivity Modulation in ESD devices -- Physical Approach to Reliability. | |
520 | _aPhysical Limitations of Semiconductor Devices provides an in depth understanding of the phenomena and regularities that play a critical role in the limitation of semiconductor device capabilities. It discusses how thermo-electrical breakdown, conductivity modulation, and electrical and spatial current instability phenomena affect the limitations of the devices. The authors give examples of the phenomena ranging from elementary semiconductor diode structures to discrete power and integrated components. They also show circuits both for silicon and compound semiconductor devices. The material covers different levels of complexity including phenomenological, analytical, and numerical simulation. The material also explores the most complex phenomena of current filamentation and the impact of local structure defects, physical safe operating area limitations, and various scenarios of catastrophic failures in semiconductor devices. The emphasis of the book is on the physical approach to reliability assurance, safe operating area, and ESD problems. Physical Limitations of Semiconductor Devices provides an important link between the theoretical aspects of the physics of semiconductor devices, non-linear physics, and the practical applications of microelectronics. | ||
590 | _aPara consulta fuera de la UANL se requiere clave de acceso remoto. | ||
700 | 1 |
_aSinkevitch, V. F. _eautor _9303699 |
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710 | 2 |
_aSpringerLink (Servicio en línea) _9299170 |
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776 | 0 | 8 |
_iEdición impresa: _z9780387745138 |
856 | 4 | 0 |
_uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-0-387-74514-5 _zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL) |
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