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001			279496
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007			cr nn 008mamaa
008			150903s2009 xxu| o |||| 0|eng d
020			_a9780387786063 _99780387786063
024	7		_a10.1007/9780387786063 _2doi
035			_avtls000332939
039		9	_a201509030759 _bVLOAD _c201404122314 _dVLOAD _c201404092049 _dVLOAD _y201402041058 _zstaff
040			_aMX-SnUAN _bspa _cMX-SnUAN _erda
050		4	_aT174.7
100	1		_aGhatak, Kamakhya Prasad. _eautor _9303856
245	1	0	_aPhotoemission from Optoelectronic Materials and their Nanostructures / _cby Kamakhya Prasad Ghatak, Sitangshu Bhattacharya, Debashis De.
264		1	_aNew York, NY : _bSpringer New York : _bImprint: Springer, _c2009.
300			_aCCCxxIx, 19 páginas 209 ilustraciones _brecurso en línea.
336			_atexto _btxt _2rdacontent
337			_acomputadora _bc _2rdamedia
338			_arecurso en línea _bcr _2rdacarrier
347			_aarchivo de texto _bPDF _2rda
490	0		_aNanostructure Science and Technology, _x1571-5744
500			_aSpringer eBooks
505	0		_aFundamentals of Photoemission from Wide Gap Materials -- Fundamentals of Photoemission from Quantum Wells in Ultrathin Films and Quantum Well Wires of Various Nonparabolic Materials -- Fundamentals of Photoemission from Quantum Dots of Various Nonparabolic Materials -- Photoemission from Quantum Confined Semiconductor Superlattices -- Photoemission from Bulk Optoelectronic Materials -- Photoemission under Quantizing Magnetic Field from Optoelectronic Materials -- Photoemission from Quantum Wells in Ultrathin Films, Quantum Wires, and Dots of Optoelectronic Materials -- Photoemission from Quantum Confined Effective Mass Superlattices of Optoelectronic Materials -- Photoemission from Quantum Confined Superlattices of Optoelectronic Materials with Graded Interfaces -- Review of Experimental Results -- Conclusion and Future Research.
520			_aPhotoemission from Optoelectronic Materials and Their Nanostructures is the first monograph to investigate the photoemission from low-dimensional nonlinear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, bismuth, carbon nanotubes, GaSb, IV-VI, Pb1-xGexTe, graphite, Te, II-V, ZnP2, CdP2 , Bi2Te3, Sb, and IV-VI materials. The investigation leads to a discussion of III-V, II-VI, IV-VI and HgTe/CdTe quantum confined superlattices, and superlattices of optoelectronic materials. Photo-excitation changes the band structure of optoelectronic compounds in fundamental ways, which has been incorporated into the analysis of photoemission from macro- and micro-structures of these materials on the basis of newly formulated electron dispersion laws that control the studies of quantum effect devices in the presence of light. The importance of the measurement of band gap in optoelectronic materials in the presence of external photo-excitation has been discussed from this perspective. This monograph contains 125 open-ended research problems which form an integral part of the text and are useful for graduate courses on modern optoelectronics in addition to aspiring Ph.D.’s and researchers in the fields of materials science, computational and theoretical nano-science and -technology, semiconductor optoelectronics, quantized-structures, semiconductor physics and condensed matter physics.
590			_aPara consulta fuera de la UANL se requiere clave de acceso remoto.
700	1		_aBhattacharya, Sitangshu. _eautor _9303857
700	1		_aDe, Debashis. _eautor _9303858
710	2		_aSpringerLink (Servicio en línea) _9299170
776	0	8	_iEdición impresa: _z9780387786056
856	4	0	_uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-0-387-78606-3 _zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
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