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003 MX-SnUAN
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007 cr nn 008mamaa
008 150903s2010 xxu| o |||| 0|eng d
020 _a9780387471013
_99780387471013
024 7 _a10.1007/9780387471013
_2doi
035 _avtls000331519
039 9 _a201509030754
_bVLOAD
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040 _aMX-SnUAN
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_cMX-SnUAN
_erda
050 4 _aTK7888.4
100 1 _aJespers, Paul.
_eautor
_9305283
245 1 4 _aThe gm/ID Methodology, A Sizing Tool for Low-voltage Analog CMOS Circuits :
_bThe semi-empirical and compact model approaches /
_cby Paul Jespers.
264 1 _aBoston, MA :
_bSpringer US,
_c2010.
300 _axvI, 171 páginas,
_brecurso en línea.
336 _atexto
_btxt
_2rdacontent
337 _acomputadora
_bc
_2rdamedia
338 _arecurso en línea
_bcr
_2rdacarrier
347 _aarchivo de texto
_bPDF
_2rda
490 0 _aAnalog Circuits and Signal Processing
500 _aSpringer eBooks
520 _aHow to determine transistor sizes and currents when the supply voltages of analog CMOS circuits do not exceed 1.2V and transistors operate in weak, moderate or strong inversion? The gm/ID methodology offers a solution provided a reference transconductance over drain current ratio is available. The reference may be the result of measurements carried out on real physical transistors or advanced models. The reference may also take advantage of a compact model. In The gm/ID Methodology, a Sizing Tool for Low-Voltage Analog CMOS Circuits, we compare the semi-empirical to the compact model approach. Small numbers of parameters make the compact model attractive for the model paves the way towards analytic expressions unaffordable otherwise. The E.K.V model is a good candidate, but when it comes to short channel devices, compact models are either inaccurate or loose straightforwardness. Because sizing requires basically a reliable large signal representation of MOS transistors, we investigate the potential of the E.K.V model when its parameters are supposed to be bias dependent. The model-driven and semi-empirical methods are compared considering the Intrinsic Gain Stage and a few more complex circuits. A series of MATLAB files found on extras-springer.com allow redoing the tests.
590 _aPara consulta fuera de la UANL se requiere clave de acceso remoto.
710 2 _aSpringerLink (Servicio en línea)
_9299170
776 0 8 _iEdición impresa:
_z9780387471006
856 4 0 _uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-0-387-47101-3
_zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
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999 _c280384
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