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008			150903s2005 ne | o |||| 0|eng d
020			_a9781402021701 _99781402021701
024	7		_a10.1007/1402021704 _2doi
035			_avtls000334069
039		9	_a201509030232 _bVLOAD _c201404120642 _dVLOAD _c201404090422 _dVLOAD _y201402041139 _zstaff
040			_aMX-SnUAN _bspa _cMX-SnUAN _erda
100	1		_aSikula, Josef. _eeditor. _9306877
245	1	0	_aAdvanced Experimental Methods For Noise Research in Nanoscale Electronic Devices / _cedited by Josef Sikula, Michael Levinshtein.
246	3		_aProceedings of the NATO Advanced Research Workshop, held in Brno, Czech Republic, 14-16 August 2003
264		1	_aDordrecht : _bSpringer Netherlands, _c2005.
300			_aIx, 367 páginas _brecurso en línea.
336			_atexto _btxt _2rdacontent
337			_acomputadora _bc _2rdamedia
338			_arecurso en línea _bcr _2rdacarrier
347			_aarchivo de texto _bPDF _2rda
490	0		_aNATO Science Series II: Mathematics, Physics and Chemistry, II. Mathematics, Physics and Chemistry, _x1568-2609 ; _v151
500			_aSpringer eBooks
505	0		_a1/f Noise Sources -- Noise Sources in GaN/AlGaN Quantum Wells and Devices -- 1/f Noise in Nanomaterials and Nanostructurea: Old Questions in a New Fashion -- 1/f Spectra as a Consequence of the Randomness of Variance -- Quantum Phase Locking, 1/f Noise and Entanglement -- Shot Noise in Mesoscopic Devices and Quantum Dot Networks -- Super-Poissonian Noise in Nanostructures -- Stochastic and Deterministic Models of Noise -- Noise in Optoelectronic Devices -- Fluctuations of Optical and Electrical Parameters and Their Correlation of Multiple-Quantum-Well INGAAS/INP Lasers -- Microwave Noise and Fast/Ultrafast Electronic Processes in Nitride 2DEG Channels -- Noise of High Temperature Superconducting Bolometers -- 1/f Noise in MOSTs: Faster is Noisier -- Experimental Assessment of Quantum Effects in the Low-Frequency Noise and RTS of Deep Submicron MOSFETs -- Noise and Tunneling Through the 2.5 nm Gate Oxide in Soi MOSFETs -- Low Frequency Noise Studies of Si Nano-Crystal Effects in MOS Transistors and Capacitors -- Noise Modelling in Low Dimensional Electronic Structures -- Correlation Noise Measurements and Modeling of Nanoscale MOSFETs -- Tunneling Effects and Low Frequency Noise of GaN/GaAlN HFETs -- High Frequency Noise Sources Extraction in Nanometique MOSFETs -- Iiformative “Passport Data” of Surface Nano- and Mocrostrucures -- Noise Measurement Technique -- Techniques for High-Sensitivity Measurements of Shot Noise in Nanostructures -- Correlation Spectrum Analyzer: Pringiples and Limits in Noise Measurements -- Measurement and Analysis Methods for Random Telegraph Signals -- RTS in Quantum Dots and MOSFETs: Experimental Set-Up with Long-Time Stability and Magnetic Field Compensation -- Some Considerations for the Construction of Low-Noise Amplifiers in Very Low Frequency Region -- Measurements of Low Frequency Noise in Nano-Grained RuO2+Glass Films Below 1 K -- Technique for Investigation of Non-Gaussian and Non-Stationary Properties of LF Noise in Nanoscale Semiconductor Devices -- The Noise Background Suppression of Noise Measuring Set-UP -- Accuracy of Noise Measurements for 1/f and GR Noise -- Radiofrequency and Microwave Noise Metrology -- Treatment of Noise Data in Laplace Plane -- Measurement of Noise Parameter Set in the Low Frequency Range: Requirements and Instrumentation -- Techniques of Interference Reduction in Probe System for Wafer Level Noise Measurements of Submicron Semiconductor Devices -- Hooge Mobility Fluctuations in n-InSb Magnetoresistors As a Reference for Access Resistance LF-Noise Measurements of SiGe Metamorphic HMOS FETs -- Optimised Preamplifier for LF-Noise MOSFET Characterization -- Net of YBCO and LSMO Thermometers for Bolometric Applications -- Diagnostics of GaAs Light Emitting Diode pn Junctions -- New Tools For Fast And Senstive Noise Measurements -- Using a Novel, Computer Controlled Automatic System for LF Noise Measurements Under Point Probes.
520			_aA discussion of recently developed experimental methods for noise research in nanoscale electronic devices, conducted by specialists in transport and stochastic phenomena in nanoscale physics. The approach described is to create methods for experimental observations of noise sources, their localization and their frequency spectrum, voltage-current and thermal dependences. Our current knowledge of measurement methods for mesoscopic devices is summarized to identify directions for future research, related to downscaling effects. The directions for future research into fluctuation phenomena in quantum dot and quantum wire devices are specified. Nanoscale electronic devices will be the basic components for electronics of the 21st century. From this point of view the signal-to-noise ratio is a very important parameter for the device application. Since the noise is also a quality and reliability indicator, experimental methods will have a wide application in the future.
590			_aPara consulta fuera de la UANL se requiere clave de acceso remoto.
700	1		_aLevinshtein, Michael. _eeditor. _9306878
710	2		_aSpringerLink (Servicio en línea) _9299170
776	0	8	_iEdición impresa: _z9781402021695
856	4	0	_uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/1-4020-2170-4 _zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
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999			_c281304 _d281304