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020			_a9781402030789 _99781402030789
024	7		_a10.1007/1402030789 _2doi
035			_avtls000334225
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040			_aMX-SnUAN _bspa _cMX-SnUAN _erda
050		4	_aQC1-75
100	1		_aDemkov, Alexander A. _eeditor. _9307467
245	1	0	_aMaterials Fundamentals of Gate Dielectrics / _cedited by Alexander A. Demkov, Alexandra Navrotsky.
264		1	_aDordrecht : _bSpringer Netherlands, _c2005.
300			_aviii, 475 páginas _brecurso en línea.
336			_atexto _btxt _2rdacontent
337			_acomputadora _bc _2rdamedia
338			_arecurso en línea _bcr _2rdacarrier
347			_aarchivo de texto _bPDF _2rda
500			_aSpringer eBooks
505	0		_aMaterials and Physical Properties of High-K Oxide Films -- Device Principles of High-K Dielectrics -- Thermodynamics of Oxide Systems Relevant to Alternative Gate Dielectrics -- Electronic Structure and Chemical Bonding in High-k Transition Metal and Lanthanide Series Rare Earth Alternative Gate Dielectrics: Applications to Direct Tunneling and Defects at Dielectric Interfaces -- Atomic Structure, Interfaces and Defects of High Dielectric Constant Gate Oxides -- Dielectric Properties of Simple and Complex Oxides from First Principles -- IVb Transition Metal Oxides and Silicates: An Ab Initio Study -- The Interface Phase and Dielectric Physics for Crystalline Oxides on Semiconductors -- Interfacial Properties of Epitaxial Oxide/Semiconductor Systems -- Functional Structures -- Mechanistic Studies of Dielectric Growth on Silicon -- Methodology for Development of High-? Stacked Gate Dielectrics on III–V Semiconductors.
520			_aThis book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy. Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.
590			_aPara consulta fuera de la UANL se requiere clave de acceso remoto.
700	1		_aNavrotsky, Alexandra. _eeditor. _9307468
710	2		_aSpringerLink (Servicio en línea) _9299170
776	0	8	_iEdición impresa: _z9781402030772
856	4	0	_uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/1-4020-3078-9 _zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
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999			_c281625 _d281625