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001			281907
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005			20170705134206.0
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008			150903s2005 ne | o |||| 0|eng d
020			_a9781402030130 _99781402030130
024	7		_a10.1007/1402030134 _2doi
035			_avtls000334198
039		9	_a201509030244 _bVLOAD _c201404120705 _dVLOAD _c201404090445 _dVLOAD _y201402041142 _zstaff
040			_aMX-SnUAN _bspa _cMX-SnUAN _erda
050		4	_aTK7800-8360
100	1		_aFlandre, Denis. _eeditor. _9308060
245	1	0	_aScience and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment : _bProceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment Kiev, Ukraine 26–30 April 2004 / _cedited by Denis Flandre, Alexei N. Nazarov, Peter L.F. Hemment.
264		1	_aDordrecht : _bSpringer Netherlands, _c2005.
300			_axii, 348 páginas _brecurso en línea.
336			_atexto _btxt _2rdacontent
337			_acomputadora _bc _2rdamedia
338			_arecurso en línea _bcr _2rdacarrier
347			_aarchivo de texto _bPDF _2rda
490	0		_aNATO Science Series II: Mathematics, Physics and Chemistry, _x1568-2609 ; _v185
500			_aSpringer eBooks
505	0		_aTechnology and Economics -- High Temperature Electronics - Cluster Effects -- On the Evolution of SOI Materials and Devices -- SOI Technology as a Basis for Microphotonic-Microelectronic Integrated Devices -- SOI Material Technologies -- Smart Cut Technology: The Path for Advanced SOI Substrates -- Porous Silicon Based SOI: History and Prospects -- Achievement of SiGe-on-Insulator Technology -- CVD Diamond Films for SOI Technologies -- Radical Beam Quasiepitaxy Technology for Fabrication of Wide-Gap Semiconductors on Insulator -- Impact of Hydrostatic Pressure during Annealing of Si:O on Creation of Simox - Like Structures -- SiO2 and Si3N4 Phase Formation by Ion Implantation with In-Situ Ultrasound Treatment -- Fabrication and Characterisation of Silicon on Insulator Substrates Incorporating Thermal Vias -- Reliability and Operation of SOI Devices in Harsh Environment -- Reliability and Electrical Fluctuations in Advanced SOI CMOS Devices -- Hydrogen and High-Temperature Charge Instability of SOI Structures and MOSFETs -- Recent Advances in SOI MOSFET Devices and Circuits for Ultra-Low Power / High Temperature Applications -- Silicon-on-Insulator Circuits for Application at High Temperatures -- High-Voltage SOI Devices for Automotive Applications -- Heat Generation Analysis in SOI LDMOS Power Transistors -- Novel SOI MOSFET Structure for Operation over a Wide Range of Temperatures -- MOSFETs Scaling Down: Advantages and Disadvantages for High Temperature Applications -- Temperature Dependence of RF Losses in High-Resistivity SOI Substrates -- Radiation Effects -- Review of Radiation Effects in Single and Multiple-Gate SOI MOSFETs -- Radiation Effects in SOI: Irradiation by High Energy Ions and Electrons -- Radiation Characteristics of Short P- Channel MOSFETs on SOI Substrates -- Total Dose Behavior of Partially Depleted Delecut SOI MOSFETs -- Radiation Effect on Electrical Properties of Fully-Depleted Unibond SOI MOSFETs -- Characterization and Simulation of SOI Devices Operating under Harsh Environment -- Low Cost High Temperature Test System for SOI Devices -- Characterization of Carrier Generation in Thin-Film SOI Devices by Reverse Gated-Diode Technique and its Application at High Temperatures -- Back-Gate Induced Noise Overshoot in Partially-Depleted SOI MOSFETs -- Novel SOI Devices and Sensors Operating at Harsh Conditions -- SiGe Heterojunction Bipolar Transistors on Insulating Substrates -- Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI) -- High-Voltage High-Current DMOS Transistor Compatible with High-Temperature Thin-Film SOI CMOS Applications -- A Novel Low Leakage EEPROM Cell for Application in an Extended Temperature Range (?40°C Up to 225°C) -- Design, Fabrication and Characterization of SOI Pixel Detectors of Ionizing Radiation -- Polysilicon-on-Insulator Layers at Cryogenic Temperatures and High Magnetic Fields -- Planar Photomagnetic Effect SOI Sensors for Various Applications with Low Detection Limit -- Theoretical Limit for the SiO2 Thickness in Silicon MOS Devices -- Compact Model of the Nanoscale Gate-All-Around MOSFET -- Self-Assembled Semiconductor Nanowires on Silicon and Insulating Substrates: Experimental Behavior -- Fabrication of SOI Nano Devices.
520			_aThis book collects the papers presented during NATO Advanced Research Workshop "Science and technology of Semiconductor on Insulator (SOI) structures and devices operating in a harsh environment" held in Kiev 26-30 April 2004. The volume contains both reviews from invited speakers and selected papers presenting major innovations in SOI materials and devices. Particular attention is paid to the reliability of SOI structures operated under harsh conditions. In the first part of the book dealing with SOI material technology, the evolution of SOI materials, achievements in the main standard technologies as Smart Cut, SIMOX, porous silicon as well as methods to create more exotic structures are described. The second part of the book covers the reliability aspect of SOI devices operating in a harsh environment: high and low temperatures, high voltages, with a focus on radiation effects and characterization of these devices. Third part of the book overviews novel devices and sensors opportunities for such conditions and the closes with papers discussing the perspectives of SOI scaling to nano devices.
590			_aPara consulta fuera de la UANL se requiere clave de acceso remoto.
700	1		_aNazarov, Alexei N. _eeditor. _9308061
700	1		_aHemment, Peter L.F. _eeditor. _9308062
710	2		_aSpringerLink (Servicio en línea) _9299170
776	0	8	_iEdición impresa: _z9781402030116
856	4	0	_uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/1-4020-3013-4 _zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
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999			_c281907 _d281907