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020 _a9781402045561
_99781402045561
024 7 _a10.1007/1402045565
_2doi
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039 9 _a201509030224
_bVLOAD
_c201404120849
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_dVLOAD
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040 _aMX-SnUAN
_bspa
_cMX-SnUAN
_erda
050 4 _aTK7888.4
100 1 _aGRABINSKI, WLADYSLAW.
_eeditor.
_9309293
245 1 0 _aTRANSISTOR LEVEL MODELING FOR ANALOG/RF IC DESIGN /
_cedited by WLADYSLAW GRABINSKI, BART NAUWELAERS, DOMINIQUE SCHREURS.
264 1 _aDordrecht :
_bSpringer Netherlands,
_c2006.
300 _axiii, 293 páginas
_brecurso en línea.
336 _atexto
_btxt
_2rdacontent
337 _acomputadora
_bc
_2rdamedia
338 _arecurso en línea
_bcr
_2rdacarrier
347 _aarchivo de texto
_bPDF
_2rda
500 _aSpringer eBooks
505 0 _a2/3-D process and device simulation. An effective tool for better understanding of internal behavior of semiconductor structures -- PSP: An advanced surface-potential-based MOSFET model -- EKV3.0: An advanced charge based MOS transistor model.A design-oriented MOS transistor compact model -- Modelling using high-frequency measurements -- Empirical FET models -- Modeling the SOI MOSFET nonlinearities. An empirical approach -- Circuit level RF modeling and design -- On incorporating parasitic quantum effects in classical circuit simulations -- Compact modeling of the MOSFET in VHDL-AMS -- Compact modeling in Verilog-A.
520 _aThe editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The first chapter lays out the 2/3D process and device simulations as an effective tool for a better understanding of the internal behavior of semiconductor structures and this with a focus on high-voltage MOSFET devices. Subsequently, the mainstream developments of both the PSP and the EKV models are discussed in detail. These physics-based MOSFET models are compared to the measurement-based models which are frequently used in RF applications. The comparison includes an overview of the relevant empirical models and measurement techniques. The following chapters include SOI-specific aspects, modeling enhancement of small geometry MOSFET devices and a survey of quantum effects in devices and circuits. Finally, an explanation of hardware description languages such as VHDL-AMS and Verilog-A is offered and shows the possibilities of the practical implementation and standardization of the different modeling methodologies found in the preceding chapters. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
590 _aPara consulta fuera de la UANL se requiere clave de acceso remoto.
700 1 _aNAUWELAERS, BART.
_eeditor.
_9309294
700 1 _aSCHREURS, DOMINIQUE.
_eeditor.
_9309295
710 2 _aSpringerLink (Servicio en línea)
_9299170
776 0 8 _iEdición impresa:
_z9781402045554
856 4 0 _uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/1-4020-4556-5
_zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
942 _c14
999 _c282504
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