000 02940nam a22003855i 4500
001 283017
003 MX-SnUAN
005 20160429154216.0
007 cr nn 008mamaa
008 150903s2008 ne | o |||| 0|eng d
020 _a9781402086151
_99781402086151
024 7 _a10.1007/9781402086151
_2doi
035 _avtls000336074
039 9 _a201509030256
_bVLOAD
_c201404300311
_dVLOAD
_y201402041340
_zstaff
040 _aMX-SnUAN
_bspa
_cMX-SnUAN
_erda
050 4 _aTA401-492
100 1 _aCullis, A. G.
_eeditor.
_9310236
245 1 0 _aMicroscopy of Semiconducting Materials 2007 /
_cedited by A. G. Cullis, P. A. Midgley.
264 1 _aDordrecht :
_bSpringer Netherlands,
_c2008.
300 _axiv + 498 pp
_brecurso en línea.
336 _atexto
_btxt
_2rdacontent
337 _acomputadora
_bc
_2rdamedia
338 _arecurso en línea
_bcr
_2rdacarrier
347 _aarchivo de texto
_bPDF
_2rda
490 0 _aSpringer Proceedings in Physics,
_x0930-8989 ;
_v120
500 _aSpringer eBooks
505 0 _aWide Band-Gap Nitrides -- General Heteroepitaxial Layers -- High Resolution Microscopy and Nanoanalysis -- Self-Organised and Quantum Domain Structures -- Processed Silicon and Other Device Materials -- Device and Doping Studies -- FIB, SEM and SPM Advances.
520 _aThe fifteenth international conference on Microscopy of Semiconducting Materials took place in Cambridge, UK on 2-5 April 2007. It was organised by the Institute of Physics, with co-sponsorship by the Royal Microscopical Society and endorsement by the Materials Research Society. The conference focused upon the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy, scanning probe microscopy and X-ray-based methods. Conference sessions concentrated on key topics including state-of-the-art studies in high resolution imaging and analytical electron microscopy, advanced scanning probe microscopy, scanning electron microscopy and focused ion beam applications, novel epitaxial layer phenomena, the properties of quantum nanostructures, III-nitride developments, GeSi/Si for advanced devices, metal-semiconductor contacts and silicides and the important effects of critical device processing treatments. Accordingly, this volume should be of direct interest to researchers in areas ranging from fundamental studies to electronic device assessment.
590 _aPara consulta fuera de la UANL se requiere clave de acceso remoto.
700 1 _aMidgley, P. A.
_eeditor.
_9310237
710 2 _aSpringerLink (Servicio en línea)
_9299170
776 0 8 _iEdición impresa:
_z9781402086144
856 4 0 _uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-1-4020-8615-1
_zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
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999 _c283017
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