000			04024nam a22003855i 4500
001			288593
003			MX-SnUAN
005			20170705134217.0
007			cr nn 008mamaa
008			150903s2012 xxu| o |||| 0|eng d
020			_a9781461418122 _99781461418122
024	7		_a10.1007/9781461418122 _2doi
035			_avtls000340689
039		9	_a201509030350 _bVLOAD _c201404300419 _dVLOAD _y201402061031 _zstaff
040			_aMX-SnUAN _bspa _cMX-SnUAN _erda
050		4	_aTK7800-8360
100	1		_aHe, Ming. _eautor _9318407
245	1	0	_aMetal-Dielectric Interfaces in Gigascale Electronics : _bThermal and Electrical Stability / _cby Ming He, Toh-Ming Lu.
264		1	_aNew York, NY : _bSpringer New York, _c2012.
300			_axI, 149 páginas 120 ilustraciones, 48 ilustraciones en color. _brecurso en línea.
336			_atexto _btxt _2rdacontent
337			_acomputadora _bc _2rdamedia
338			_arecurso en línea _bcr _2rdacarrier
347			_aarchivo de texto _bPDF _2rda
490	0		_aSpringer Series in Materials Science, _x0933-033X ; _v157
500			_aSpringer eBooks
505	0		_aPreface -- 1. Introduction -- 2. Metal-Dielectric Diffusion Processes: Fundamentals -- 3. Experimental Techniques -- 4. Al-Dielectric Interfaces -- 5. Cu-Dielectric Interfaces -- 6. Barrier Metal-Dielectric Interfaces -- 7. Self-Forming Barriers. 8. Kinetics of Ion Drift -- 9. Time-Dependent Dielectric Breakdown (TDDB) and Future Directions.
520			_aMetal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying  the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate  interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics  provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.   Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces Features fundamental considerations in the physics and chemistry of metal-dielectric interactions Explores mechanisms of metal atom diffusion and metal ion drift in dielectrics Provides keys to understanding reliability in gigascale electronics Focuses on a dynamic area of current research that is a foundation of future interconnect systems, memristors, and solid-state electrolyte devices Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces
590			_aPara consulta fuera de la UANL se requiere clave de acceso remoto.
700	1		_aLu, Toh-Ming. _eautor _9303906
710	2		_aSpringerLink (Servicio en línea) _9299170
776	0	8	_iEdición impresa: _z9781461418115
856	4	0	_uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-1-4614-1812-2 _zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
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