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008 150903s2013 xxu| o |||| 0|eng d
020 _a9781461486602
_99781461486602
024 7 _a10.1007/9781461486602
_2doi
035 _avtls000342549
039 9 _a201509030855
_bVLOAD
_c201405050245
_dVLOAD
_y201402061129
_zstaff
040 _aMX-SnUAN
_bspa
_cMX-SnUAN
_erda
050 4 _aTA404.6
100 1 _aJoy, David C.
_eautor
_9320825
245 1 0 _aHelium Ion Microscopy :
_bPrinciples and Applications /
_cby David C. Joy.
264 1 _aNew York, NY :
_bSpringer New York :
_bImprint: Springer,
_c2013.
300 _aviii, 64 páginas 29 ilustraciones, 16 ilustraciones en color.
_brecurso en línea.
336 _atexto
_btxt
_2rdacontent
337 _acomputadora
_bc
_2rdamedia
338 _arecurso en línea
_bcr
_2rdacarrier
347 _aarchivo de texto
_bPDF
_2rda
490 0 _aSpringerBriefs in Materials,
_x2192-1091
500 _aSpringer eBooks
505 0 _aChapter 1: Introduction to Helium Ion Microscopy -- Chapter 2: Microscopy with Ions  - A brief history -- Chapter 3: Operating the Helium Ion Microscope -- Chapter 4: Ion –Solid  Interactions  and Image Formation -- Chapter 5: Charging and  Damage -- Chapter 6: Microanalysis with the HIM -- Chapter 7: Ion Generated Damage -- Chapter 8: Working with other Ion beams -- Chapter 9: Patterning and Nanofabrication -- Conclusion -- Bibliography -- Appendix: iSE Yields,  and IONiSE  parameters for  He+ excitation  of Elements and Compounds -- Index.
520 _aHelium Ion Microscopy: Principles and Applications describes the theory and discusses the practical details of why scanning microscopes using beams of light ions – such as the Helium Ion Microscope (HIM) – are destined to become the imaging tools of choice for the 21st century. Topics covered include the principles, operation, and performance of the Gaseous Field Ion Source (GFIS), and a comparison of the optics of ion and electron beam microscopes including their operating conditions, resolution, and signal-to-noise performance. The physical principles of Ion-Induced Secondary Electron (iSE) generation by ions are discussed, and an extensive database of iSE yields for many elements and compounds as a function of incident ion species and its energy is included. Beam damage and charging are frequently outcomes of ion beam irradiation, and techniques to minimize such problems are presented. In addition to imaging, ions beams can be used for the controlled deposition, or removal, of selected materials with nanometer precision. The techniques and conditions required for nanofabrication are discussed and demonstrated. Finally, the problem of performing chemical microanalysis with ion beams is considered. Low energy ions cannot generate X-ray emissions, so alternative techniques such as Rutherford Backscatter Imaging (RBI) or Secondary Ion Mass Spectrometry (SIMS) are examined. Serves as a concise but authoritative introduction to the latest innovation in scanning microscopy Compares ion and electron beams as options for microscopy Presents a detailed physical model of ion-solid interactions and signal generation Provides a detailed database of iSE yield behavior as a function of the target ion, element, and energy
590 _aPara consulta fuera de la UANL se requiere clave de acceso remoto.
710 2 _aSpringerLink (Servicio en línea)
_9299170
776 0 8 _iEdición impresa:
_z9781461486596
856 4 0 _uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-1-4614-8660-2
_zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
942 _c14
999 _c290222
_d290222