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008 150903s2009 xxk| o |||| 0|eng d
020 _a9781848829374
_99781848829374
024 7 _a10.1007/9781848829374
_2doi
035 _avtls000344575
039 9 _a201509030355
_bVLOAD
_c201405050309
_dVLOAD
_y201402061300
_zstaff
040 _aMX-SnUAN
_bspa
_cMX-SnUAN
_erda
050 4 _aTA342-343
100 1 _aCole, E.A.B.
_eautor
_9322138
245 1 0 _aMathematical and Numerical Modelling of Heterostructure Semiconductor Devices: From Theory to Programming /
_cby E.A.B. Cole.
264 1 _aLondon :
_bSpringer London,
_c2009.
300 _axv, 406 pp
_brecurso en línea.
336 _atexto
_btxt
_2rdacontent
337 _acomputadora
_bc
_2rdamedia
338 _arecurso en línea
_bcr
_2rdacarrier
347 _aarchivo de texto
_bPDF
_2rda
500 _aSpringer eBooks
505 0 _aOverview and physical equations -- Overview of device modelling -- Quantum mechanics -- Equilibrium thermodynamics and statistical mechanics -- Density of states and applications—1 -- Density of states and applications—2 -- The transport equations and the device equations -- Mathematical and numerical methods -- Basic approximation and numerical methods -- Fermi and associated integrals -- The upwinding method -- Solution of equations: the Newton and reduced method -- Solution of equations: the phaseplane method -- Solution of equations: the multigrid method -- Approximate and numerical solutions of the Schrödinger equation -- Genetic algorithms and simulated annealing -- Grid generation.
520 _aThe commercial development of novel semiconductor devices requires that their properties be examined as thoroughly and rapidly as possible. These properties are investigated by obtaining numerical solutions of the highly nonlinear coupled set of equations which govern their behaviour. In particular, the existence of interfaces between different material layers in heterostructures means that quantum solutions must be found in the quantum wells which are formed at these interfaces. This book presents some of the mathematical and numerical techniques associated with the investigation. It begins with introductions to quantum and statistical mechanics. Later chapters then cover finite differences; multigrids; upwinding techniques; simulated annealing; mesh generation; and the reading of computer code in C++; these chapters are self-contained, and do not rely on the reader having met these topics before. The author explains how the methods can be adapted to the specific needs of device modelling, the advantages and disadvantages of each method, the pitfalls to avoid, and practical hints and tips for successful implementation. Sections of computer code are included to illustrate the methods used. Written for anyone who is interested in learning about, or refreshing their knowledge of, some of the basic mathematical and numerical methods involved in device modelling, this book is suitable for advanced undergraduate and graduate students, lecturers and researchers working in the fields of electrical engineering and semiconductor device physics, and for students of other mathematical and physical disciplines starting out in device modelling.
590 _aPara consulta fuera de la UANL se requiere clave de acceso remoto.
710 2 _aSpringerLink (Servicio en línea)
_9299170
776 0 8 _iEdición impresa:
_z9781848829367
856 4 0 _uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-1-84882-937-4
_zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
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999 _c291046
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