000 03307nam a22003855i 4500
001 292195
003 MX-SnUAN
005 20160429154944.0
007 cr nn 008mamaa
008 150903s2014 gw | o |||| 0|eng d
020 _a9783319013398
_99783319013398
024 7 _a10.1007/9783319013398
_2doi
035 _avtls000345970
039 9 _a201509030910
_bVLOAD
_c201405050327
_dVLOAD
_y201402070846
_zstaff
040 _aMX-SnUAN
_bspa
_cMX-SnUAN
_erda
050 4 _aQC610.9-611.8
100 1 _aGhatak, Kamakhya Prasad.
_eautor
_9303856
245 1 0 _aDebye Screening Length :
_bEffects of Nanostructured Materials /
_cby Kamakhya Prasad Ghatak, Sitangshu Bhattacharya.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2014.
300 _axxxiii, 385 páginas 123 ilustraciones
_brecurso en línea.
336 _atexto
_btxt
_2rdacontent
337 _acomputadora
_bc
_2rdamedia
338 _arecurso en línea
_bcr
_2rdacarrier
347 _aarchivo de texto
_bPDF
_2rda
490 0 _aSpringer Tracts in Modern Physics,
_x0081-3869 ;
_v255
500 _aSpringer eBooks
505 0 _aFrom the Contents: Part I Influence of Light Waves on the DSL in Optoelectronic Semiconductors -- Part II Influence of Quantum Confinement on the DSL in Non-Parabolic Semiconductors -- Part III Influence of Intense Electric Field on the DSL in Optoelectronic Semiconductors.
520 _aThis monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.
590 _aPara consulta fuera de la UANL se requiere clave de acceso remoto.
700 1 _aBhattacharya, Sitangshu.
_eautor
_9303857
710 2 _aSpringerLink (Servicio en línea)
_9299170
776 0 8 _iEdición impresa:
_z9783319013381
856 4 0 _uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-3-319-01339-8
_zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
942 _c14
999 _c292195
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