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007 | cr nn 008mamaa | ||
008 | 150903s2005 gw | o |||| 0|eng d | ||
020 |
_a9783540263821 _99783540263821 |
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024 | 7 |
_a10.1007/b137494 _2doi |
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035 | _avtls000346590 | ||
039 | 9 |
_a201509030418 _bVLOAD _c201405070506 _dVLOAD _y201402070901 _zstaff |
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_aMX-SnUAN _bspa _cMX-SnUAN _erda |
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100 | 1 |
_aKasper, Erich. _eautor _9325971 |
|
245 | 1 | 0 |
_aSilicon Quantum Integrated Circuits : _bSilicon-Germanium Heterostructure Devices: Basics and Realisations / _cby Erich Kasper, D.J. Paul. |
264 | 1 |
_aBerlin, Heidelberg : _bSpringer Berlin Heidelberg, _c2005. |
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300 |
_axii, 361 páginas 263 ilustraciones _brecurso en línea. |
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336 |
_atexto _btxt _2rdacontent |
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337 |
_acomputadora _bc _2rdamedia |
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338 |
_arecurso en línea _bcr _2rdacarrier |
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347 |
_aarchivo de texto _bPDF _2rda |
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490 | 0 |
_aNanoScience and Technology, _x1434-4904 |
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500 | _aSpringer eBooks | ||
505 | 0 | _aMaterial Science -- Resumé of Semiconductor Physics -- Realisation of Potential Barriers -- Electronic Device Principles -- Heterostructure Bipolar Transistors - HBTs -- Hetero Field Effect Transistors (HFETs) -- Tunneling Phenomena -- Optoelectronics -- Integration -- Outlook. | |
520 | _aQuantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics. | ||
590 | _aPara consulta fuera de la UANL se requiere clave de acceso remoto. | ||
700 | 1 |
_aPaul, D.J. _eautor _9325972 |
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710 | 2 |
_aSpringerLink (Servicio en línea) _9299170 |
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776 | 0 | 8 |
_iEdición impresa: _z9783540220503 |
856 | 4 | 0 |
_uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/b137494 _zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL) |
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_c293407 _d293407 |