000			02977nam a22003735i 4500
001			296958
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005			20160429155355.0
007			cr nn 008mamaa
008			150903s2006 gw | o |||| 0|eng d
020			_a9783540452980 _99783540452980
024	7		_a10.1007/9783540452980 _2doi
035			_avtls000349552
039		9	_a201509030446 _bVLOAD _c201405050345 _dVLOAD _y201402071205 _zstaff
040			_aMX-SnUAN _bspa _cMX-SnUAN _erda
050		4	_aQC770-798
100	1		_aNastasi, Michael. _eautor _9332385
245	1	0	_aIon Implantation and Synthesis of Materials / _cby Michael Nastasi, James W. Mayer.
264		1	_aBerlin, Heidelberg : _bSpringer Berlin Heidelberg, _c2006.
300			_axiii, 263 páginas 131 ilustraciones _brecurso en línea.
336			_atexto _btxt _2rdacontent
337			_acomputadora _bc _2rdamedia
338			_arecurso en línea _bcr _2rdacarrier
347			_aarchivo de texto _bPDF _2rda
500			_aSpringer eBooks
505	0		_aGeneral Features and Fundamental Concepts -- Particle Interactions -- Dynamics of Binary Elastic Collisions -- Cross-Section -- Ion Stopping -- Ion Range and Range Distribution -- Displacements and Radiation Damage -- Channeling -- Doping, Diffusion and Defects in Ion-Implanted Si -- Crystallization and Regrowth of Amorphous Si -- Si Slicing and Layer Transfer: Ion-Cut -- Surface Erosion During Implantation: Sputtering -- Ion-Induced Atomic Intermixing at the Interface: Ion Beam Mixing -- Application of Ion Implantation Techniques in CMOS Fabrication -- Ion implantation in CMOS Technology: Machine Challenges.
520			_aIon implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
590			_aPara consulta fuera de la UANL se requiere clave de acceso remoto.
700	1		_aMayer, James W. _eautor _9300190
710	2		_aSpringerLink (Servicio en línea) _9299170
776	0	8	_iEdición impresa: _z9783540236740
856	4	0	_uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-3-540-45298-0 _zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
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999			_c296958 _d296958