000 04281nam a22003735i 4500
001 297201
003 MX-SnUAN
005 20160429155412.0
007 cr nn 008mamaa
008 150903s2008 gw | o |||| 0|eng d
020 _a9783540745297
_99783540745297
024 7 _a10.1007/9783540745297
_2doi
035 _avtls000350871
039 9 _a201509030502
_bVLOAD
_c201405060241
_dVLOAD
_y201402171108
_zstaff
040 _aMX-SnUAN
_bspa
_cMX-SnUAN
_erda
050 4 _aTA1750-1750.22
100 1 _aErol, Ay?e.
_eeditor.
_9332793
245 1 0 _aDilute III-V Nitride Semiconductors and Material Systems :
_bPhysics and Technology /
_cedited by Ay?e Erol.
264 1 _aBerlin, Heidelberg :
_bSpringer Berlin Heidelberg,
_c2008.
300 _brecurso en línea.
336 _atexto
_btxt
_2rdacontent
337 _acomputadora
_bc
_2rdamedia
338 _arecurso en línea
_bcr
_2rdacarrier
347 _aarchivo de texto
_bPDF
_2rda
490 0 _aMaterials Science,
_x0933-033X ;
_v105
500 _aSpringer eBooks
505 0 _aEnergetic Beam Synthesis of Dilute Nitrides and Related Alloys -- Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (100) and (111)B Quantum Wells -- Electronic Band Structure of Highly Mismatched Semiconductor Alloys -- Electronic Structure of GaNxAs1?x Under Pressure -- Experimental Studies of GaInNAs Conduction Band Structure -- Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and the Electron Effective Mass Issues -- The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides -- Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells -- Assessing the Preferential Chemical Bonding of Nitrogen in Novel Dilute III–As–N Alloys -- The Hall Mobility in Dilute Nitrides -- Spin Dynamics in Dilute Nitride -- Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs -- Properties and Laser Applications of the GaP-Based (GaNAsP)-Material System for Integration to Si Substrates -- Comparison of the Electronic Band Formation and Band Structure of GaNAs and GaNP -- Doping, Electrical Properties and Solar Cell Application of GaInNAs -- Elemental Devices and Circuits for Monolithic Optoelectronic-Integrated Circuit Fabricated in Dislocation-Free Si/III–V-N Alloy Layers Grown on Si Substrate -- Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers -- Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition -- Interdiffused GaInNAsSb Quantum Well on GaAs for 1,300–1,550 nm Diode Lasers -- Vertical Cavity Semiconductor Optical Amplifiers Based on Dilute Nitrides -- Dilute Nitride Photodetector and Modulator Devices.
520 _aA major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor lattice leads to a dramatic reduction of the band gap. This discovery has opened the possibility of using these material systems for applications ranging from lasers to solar cells. Physics and Technology of Dilute III-V Nitride Semiconductors & Novel Dilute Nitride Material Systems reviews the current status of research and development in dilute III-V nitrides, with 24 chapters from prominent research groups covering recent progress in growth techniques, experimental characterization of band structure, defects carrier transport, transport properties, dynamic behavior of N atoms, device applications, modeling of device design, novel optoelectronic integrated circuits, and novel nitrogen containing III-V materials.
590 _aPara consulta fuera de la UANL se requiere clave de acceso remoto.
710 2 _aSpringerLink (Servicio en línea)
_9299170
776 0 8 _iEdición impresa:
_z9783540745280
856 4 0 _uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-3-540-74529-7
_zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
942 _c14
999 _c297201
_d297201