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008 150903s2009 gw | o |||| 0|eng d
020 _a9783540856146
_99783540856146
024 7 _a10.1007/9783540856146
_2doi
035 _avtls000352085
039 9 _a201509030933
_bVLOAD
_c201405060300
_dVLOAD
_y201402171152
_zstaff
040 _aMX-SnUAN
_bspa
_cMX-SnUAN
_erda
050 4 _aTA1750-1750.22
100 1 _aClaeys, Cor.
_eeditor.
_9335295
245 1 0 _aExtended Defects in Germanium :
_bFundamental and Technological Aspects /
_cedited by Cor Claeys, Eddy Simoen.
264 1 _aBerlin, Heidelberg :
_bSpringer Berlin Heidelberg,
_c2009.
300 _brecurso en línea.
336 _atexto
_btxt
_2rdacontent
337 _acomputadora
_bc
_2rdamedia
338 _arecurso en línea
_bcr
_2rdacarrier
347 _aarchivo de texto
_bPDF
_2rda
490 0 _aSpringer Series in Materials Science,
_x0933-033X ;
_v118
500 _aSpringer eBooks
505 0 _aDislocations in Germanium: Mechanical Properties -- Electrical and Optical Properties -- Grain Boundaries in Germanium -- Germanium-Based Substrate Defects -- Process-Induced Defects in Germanium.
520 _aThe aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control.
590 _aPara consulta fuera de la UANL se requiere clave de acceso remoto.
700 1 _aSimoen, Eddy.
_eeditor.
_9335296
710 2 _aSpringerLink (Servicio en línea)
_9299170
776 0 8 _iEdición impresa:
_z9783540856115
856 4 0 _uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-3-540-85614-6
_zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
942 _c14
999 _c298745
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