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008 150903s2012 gw | o |||| 0|eng d
020 _a9783642287053
_99783642287053
024 7 _a10.1007/9783642287053
_2doi
035 _avtls000358838
039 9 _a201509031017
_bVLOAD
_c201405070237
_dVLOAD
_y201402191541
_zstaff
040 _aMX-SnUAN
_bspa
_cMX-SnUAN
_erda
050 4 _aTA1750-1750.22
100 1 _aKolobov, Alexander V.
_eautor
_9345089
245 1 0 _aChalcogenides :
_bMetastability and Phase Change Phenomena /
_cby Alexander V. Kolobov, Junji Tominaga.
264 1 _aBerlin, Heidelberg :
_bSpringer Berlin Heidelberg :
_bImprint: Springer,
_c2012.
300 _axvI, 284 páginas 221 ilustraciones, 89 ilustraciones en color.
_brecurso en línea.
336 _atexto
_btxt
_2rdacontent
337 _acomputadora
_bc
_2rdamedia
338 _arecurso en línea
_bcr
_2rdacarrier
347 _aarchivo de texto
_bPDF
_2rda
490 0 _aSpringer Series in Materials Science,
_x0933-033X ;
_v164
500 _aSpringer eBooks
505 0 _aEssentials of amorphous semiconductors -- Photo-induced phenomena in S- and Se-based chalcogenides.-Metastability in Te-based chalcogenides -- Phase change in Te-based alloys for memory applications -- Phase-change optical data storage -- Super-resolution near-field sructure (Super-RENS) optical discs -- Ovonic unified memories -- What comes next.
520 _aA state-of-the-art description of metastability observed in chalcogenide alloys is presented with the accent on the underlying physics. A comparison is made between sulphur(selenium)-based chalcogenide glasses, where numerous photo-induced phenomena take place entirely within the amorphous phase, and tellurides where a reversible crystal-to-amorphous phase-change transformation is a major effect. Applications of metastability in devices¿optical memories and nonvolatile electronic phase-change random-access memories among others are discussed, including the latest trends. Background material essential for understanding current research in the field is also provided.
590 _aPara consulta fuera de la UANL se requiere clave de acceso remoto.
700 1 _aTominaga, Junji.
_eautor
_9326070
710 2 _aSpringerLink (Servicio en línea)
_9299170
776 0 8 _iEdición impresa:
_z9783642287046
856 4 0 _uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-3-642-28705-3
_zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
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999 _c305957
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