000			02981nam a22003735i 4500
001			306965
003			MX-SnUAN
005			20170705134313.0
007			cr nn 008mamaa
008			150903s2013 gw | o |||| 0|eng d
020			_a9783642365355 _99783642365355
024	7		_a10.1007/9783642365355 _2doi
035			_avtls000361053
039		9	_a201509031009 _bVLOAD _c201405070309 _dVLOAD _y201402210939 _zstaff
040			_aMX-SnUAN _bspa _cMX-SnUAN _erda
050		4	_aTK7800-8360
100	1		_aKar, Samares. _eeditor. _9346391
245	1	0	_aHigh Permittivity Gate Dielectric Materials / _cedited by Samares Kar.
264		1	_aBerlin, Heidelberg : _bSpringer Berlin Heidelberg : _bImprint: Springer, _c2013.
300			_axxxii, 489 páginas 325 ilustraciones, 168 ilustraciones en color. _brecurso en línea.
336			_atexto _btxt _2rdacontent
337			_acomputadora _bc _2rdamedia
338			_arecurso en línea _bcr _2rdacarrier
347			_aarchivo de texto _bPDF _2rda
490	0		_aSpringer Series in Advanced Microelectronics, _x1437-0387 ; _v43
500			_aSpringer eBooks
505	0		_aHistorical Perspectives -- High Mobility Channels -- Non-Volatile Memory -- Hafnium-Based Gate Dielectric Materials -- Lanthanum-Based High-K Gate Dielectric Materials -- Crystalline High-K Gate Dielectric Materials -- High-K Gate Dielectric Processing.- Metal Gate Electrodes -- Flat-Band/Threshold Voltage Control -- Interfaces and Defects -- Electrical Characterization and Parameter Extraction -- Non-Contact Metrology of High-K Gate Dielectrics -- Channel Mobility -- High-K Gate Dielectric Reliability Issues -- Bias Temperature Instability -- Integration Issues.  .
520			_a"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects."
590			_aPara consulta fuera de la UANL se requiere clave de acceso remoto.
710	2		_aSpringerLink (Servicio en línea) _9299170
776	0	8	_iEdición impresa: _z9783642365348
856	4	0	_uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-3-642-36535-5 _zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
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999			_c306965 _d306965