| 000 | 01914nam a22003615i 4500 | ||
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| 001 | 307877 | ||
| 003 | MX-SnUAN | ||
| 005 | 20170705134315.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 150903s2011 au | o |||| 0|eng d | ||
| 020 |
_a9783709103821 _99783709103821 |
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| 024 | 7 |
_a10.1007/9783709103821 _2doi |
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| 035 | _avtls000362539 | ||
| 039 | 9 |
_a201509030619 _bVLOAD _c201405070331 _dVLOAD _y201402211052 _zstaff |
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_aMX-SnUAN _bspa _cMX-SnUAN _erda |
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| 050 | 4 | _aTK7800-8360 | |
| 100 | 1 |
_aSverdlov, Viktor. _eautor _9347642 |
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| 245 | 1 | 0 |
_aStrain-Induced Effects in Advanced MOSFETs / _cby Viktor Sverdlov. |
| 264 | 1 |
_aVienna : _bSpringer Vienna : _bImprint: Springer, _c2011. |
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| 300 |
_axiv, 252 páginas 101 ilustraciones _brecurso en línea. |
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| 336 |
_atexto _btxt _2rdacontent |
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| 337 |
_acomputadora _bc _2rdamedia |
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| 338 |
_arecurso en línea _bcr _2rdacarrier |
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| 347 |
_aarchivo de texto _bPDF _2rda |
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| 490 | 0 |
_aComputational Microelectronics, _x0179-0307 |
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| 500 | _aSpringer eBooks | ||
| 520 | _aStrain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given | ||
| 590 | _aPara consulta fuera de la UANL se requiere clave de acceso remoto. | ||
| 710 | 2 |
_aSpringerLink (Servicio en línea) _9299170 |
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| 776 | 0 | 8 |
_iEdición impresa: _z9783709103814 |
| 856 | 4 | 0 |
_uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-3-7091-0382-1 _zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL) |
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