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008			150903s2010 ne | o |||| 0|eng d
020			_a9789048132805 _99789048132805
024	7		_a10.1007/9789048132805 _2doi
035			_avtls000365301
039		9	_a201509030652 _bVLOAD _c201405070411 _dVLOAD _y201402211249 _zstaff
040			_aMX-SnUAN _bspa _cMX-SnUAN _erda
050		4	_aTK7888.4
100	1		_aFulde, Michael. _eautor _9351625
245	1	0	_aVariation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies / _cby Michael Fulde.
264		1	_aDordrecht : _bSpringer Netherlands, _c2010.
300			_ax, 127 páginas _brecurso en línea.
336			_atexto _btxt _2rdacontent
337			_acomputadora _bc _2rdamedia
338			_arecurso en línea _bcr _2rdacarrier
347			_aarchivo de texto _bPDF _2rda
490	0		_aSpringer Series in Advanced Microelectronics, _x1437-0387 ; _v28
500			_aSpringer eBooks
505	0		_aAnalog Properties of Multi-Gate MOSFETs -- High-k Related Design Issues -- Multi-Gate Related Design Aspects -- Multi-Gate Tunneling FETs -- Conclusions and Outlook.
520			_aSince scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies. Closing the gap from technology to design a detailed insight into circuit performance trade-offs related to multi-gate and high-k device specifics is provided. The new effect of transient threshold voltage variations is described with an equivalent model that allows a systematic assessment of the consequences on circuit level and the development of countermeasures to compensate for performance degradation in comparators and A/D converters. Key analog, mixed-signal and RF building blocks are realized in high-k multi-gate technology and benchmarked against planar bulk. Performance and area benefits, enabled by advantageous multi-gate device properties are analytically and experimentally quantified for reference circuits, operational amplifiers and D/A converters. This is based on first time silicon investigations of complex mixed-signal building blocks as D/A converter and PLL with multi-gate devices. As another first, the integration of tunnel transistors in a multi-gate process is described, enabling devices with promising scaling and analog properties. Based on these devices a novel reference circuit is proposed which features low power consumption.
590			_aPara consulta fuera de la UANL se requiere clave de acceso remoto.
710	2		_aSpringerLink (Servicio en línea) _9299170
776	0	8	_iEdición impresa: _z9789048132799
856	4	0	_uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-90-481-3280-5 _zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL)
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