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| 008 | 160108s2015 gw | s |||| 0|eng d | ||
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_a9783319111889 _9978-3-319-11188-9 |
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| 039 | 9 |
_y201601081156 _zstaff |
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| 050 | 4 | _aQC173.96-174.52 | |
| 100 | 1 |
_aGhatak, Kamakhya Prasad, _eautor. _9303856 |
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| 245 | 1 | 0 |
_aEinstein's photoemission : _bemission from heavily-doped quantized structures / _cKamakhya Prasad Ghatak. |
| 264 | 1 |
_aCham : _bSpringer International Publishing : _bSpringer, _c2015. |
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| 300 |
_axxxviii, 495 páginas : _b161 ilustraciones |
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| 336 |
_atexto _btxt _2rdacontent |
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_acomputadora _bc _2rdamedia |
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_arecurso en línea _bcr _2rdacarrier |
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_aarchivo de texto _bPDF _2rda |
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| 490 | 0 |
_aSpringer Tracts in Modern Physics, _x0081-3869 ; _v262 |
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| 500 | _aSpringer eBooks | ||
| 505 | 0 | _aFrom the Contents: Part I Influence of Quantum Confinement on the EP from Non-Parabolic Semiconductors -- The EP from Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- Part II The EP from HD III-V Semiconductors and Their Quantized Counter Parts -- The EP from HD Kane Type Semiconductors. | |
| 590 | _aPara consulta fuera de la UANL se requiere clave de acceso remoto. | ||
| 710 | 2 |
_aSpringerLink (Servicio en línea) _9299170 |
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| 776 | 0 | 8 |
_iEdición impresa: _z9783319111872 |
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_uhttp://remoto.dgb.uanl.mx/login?url=http://dx.doi.org/10.1007/978-3-319-11188-9 _zConectar a Springer E-Books (Para consulta externa se requiere previa autentificación en Biblioteca Digital UANL) |
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