MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch /
Srivastava, Viranjay M.
MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch / by Viranjay M. Srivastava, Ghanshyam Singh. - xv, 199 páginas 55 ilustraciones, 45 ilustraciones en color. recurso en línea. - Analog Circuits and Signal Processing, 122 1872-082X ; .
Springer eBooks
Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope.
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. · Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; · Explains the design of RF switches using the technologies presented and simulates switches; · Verifies parameters and discusses feasibility of devices and switches.
9783319011653
10.1007/9783319011653 doi
TK7888.4
MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch / by Viranjay M. Srivastava, Ghanshyam Singh. - xv, 199 páginas 55 ilustraciones, 45 ilustraciones en color. recurso en línea. - Analog Circuits and Signal Processing, 122 1872-082X ; .
Springer eBooks
Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope.
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. · Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; · Explains the design of RF switches using the technologies presented and simulates switches; · Verifies parameters and discusses feasibility of devices and switches.
9783319011653
10.1007/9783319011653 doi
TK7888.4