TEST - Catálogo BURRF
   

Microscopy of Semiconducting Materials : Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK / edited by A. G. Cullis, J. L. Hutchison.

Por: Colaborador(es): Tipo de material: TextoTextoSeries Springer Proceedings in Physics ; 107Editor: Berlin, Heidelberg : Springer Berlin Heidelberg, 2005Descripción: xvI, 537 páginas 489 ilustraciones recurso en líneaTipo de contenido:
  • texto
Tipo de medio:
  • computadora
Tipo de portador:
  • recurso en línea
ISBN:
  • 9783540319153
Formatos físicos adicionales: Edición impresa:: Sin títuloRecursos en línea:
Contenidos:
Epitaxy: Wide Band-Gap Nitrides -- Epitaxy: Silicon-Germanium Alloys -- Epitaxy: Growth and Defect Phenomena -- High Resolution Microscopy and Nanoanalysis -- Self-Organised and Quantum Domain Structures -- Processed Silicon and Other Device Materials -- Device Studies -- Scanning Electron and Scanning Probe Advances.
Resumen: This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume.
Valoración
    Valoración media: 0.0 (0 votos)
No hay ítems correspondientes a este registro

Springer eBooks

Epitaxy: Wide Band-Gap Nitrides -- Epitaxy: Silicon-Germanium Alloys -- Epitaxy: Growth and Defect Phenomena -- High Resolution Microscopy and Nanoanalysis -- Self-Organised and Quantum Domain Structures -- Processed Silicon and Other Device Materials -- Device Studies -- Scanning Electron and Scanning Probe Advances.

This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume.

Para consulta fuera de la UANL se requiere clave de acceso remoto.

Universidad Autónoma de Nuevo León
Secretaría de Extensión y Cultura - Dirección de Bibliotecas @
Soportado en Koha